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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Tradename | |
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | StrongIRFET |
