- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,189
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 8.2mOhms 87nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 20 V | - 15 A | 8.2 mOhms | 87 nC | Enhancement | |||||
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8,140
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 80 A | 8.2 mOhms | Enhancement | OptiMOS | |||||
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866
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 86 A | 8.2 mOhms | 1.35 V to 2.35 V | 17 nC | Enhancement | ||||
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332
In-stock
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IR / Infineon | MOSFET MOSFT 30V 86A 6.5mOhm 17nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 86 A | 8.2 mOhms | 17 nC |
