- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
28 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,068
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 3 V | 44 nC | Enhancement | ||||
|
|
1,854
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.0085 Ohm typ 40A STripFET VII | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 270 mOhms | 4 V | 44 nC | |||||
|
|
2,477
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 11mOhms 44nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 18 mOhms | 44 nC | Enhancement | |||||
|
|
1,709
In-stock
|
IR / Infineon | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 7.3 mOhms | 2.1 V | 44 nC | Enhancement | StrongIRFET | |||
|
|
1,424
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 295 mOhms | 44 nC | ||||||||
|
|
554
In-stock
|
STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1.7 kV | 2.6 A | 7 Ohms | 3 V | 44 nC | Enhancement | ||||
|
|
666
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | ||||||||
|
|
214
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V 0.190 16A MDmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 220 mOhms | 3 V | 44 nC | |||||
|
|
1,271
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 16 A | 115 mOhms | 4 V | 44 nC | |||||
|
|
100
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
|
|
304
In-stock
|
STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1700 V | 2.6 A | 13 Ohms | 3 V | 44 nC | Enhancement | ||||
|
|
285
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
|
|
468
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 10.4A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
|
|
380
In-stock
|
IR / Infineon | MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | ||||||
|
|
246
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | |||||
|
|
23
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | ||||
|
|
52
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 80A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.6 mOhms | 2.1 V | 44 nC | Enhancement | OptiMOS | |||
|
|
95
In-stock
|
Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.1 mOhms | 1.5 V | 44 nC | Enhancement | NexFET | |||
|
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 10.4A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
|
|
500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
|
|
699
In-stock
|
Texas instruments | MOSFET 60-V N-Chanel NxFT Pwr MOSFETs | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.3 mOhms | 1.8 V | 44 nC | NexFET | ||||
|
|
VIEW | Infineon Technologies | MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | ||||||||
|
|
VIEW | Infineon Technologies | MOSFET HIGH POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 44 nC | Enhancement | ||||||
|
|
300
In-stock
|
STMicroelectronics | MOSFET N-Ch 650V 0.25 Ohm typ. 15A MDmesh II | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 710 V | 15 A | 270 mOhms | 4 V | 44 nC | |||||
|
|
2,393
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 89A 8mOhm 44nC Log Lvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 44 nC | ||||||||
|
|
347
In-stock
|
IR / Infineon | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | ||||||||
|
|
4
In-stock
|
IR / Infineon | MOSFET 20V -150V P-CH FET 290mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | Enhancement |
