- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 0.014 Ohms (1)
- 1.6 mOhms (4)
- 10 mOhms (1)
- 115 mOhms (1)
- 12 mOhms (3)
- 120 mOhms (1)
- 13 Ohms (1)
- 14.5 mOhms (1)
- 144 mOhms (6)
- 162 mOhms (2)
- 18 mOhms (2)
- 20 mOhms (1)
- 220 mOhms (1)
- 230 mOhms (2)
- 270 mOhms (2)
- 290 mOhms (5)
- 295 mOhms (2)
- 3.04 mOhms (1)
- 3.3 mOhm (1)
- 3.6 mOhms (2)
- 3.9 mOhms (1)
- 4.3 mOhms (1)
- 4.6 mOhms (1)
- 5.1 mOhms (2)
- 5.3 mOhms (2)
- 55 mOhms (1)
- 580 mOhms (5)
- 6.5 mOhms (1)
- 6.6 mOhms (1)
- 7 mOhms (1)
- 7 Ohms (1)
- 7.3 mOhms (1)
- 8 mOhms (1)
- 9.9 mOhms (1)
- Applied Filters :
60 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
14,500
In-stock
|
Fairchild Semiconductor | MOSFET PT8P 20_8V from vanguard | 8 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 56 A | 20 mOhms | - 400 mV | 44 nC | Enhancement | PowerTrench | ||||
|
3,068
In-stock
|
Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 89 A | 12 mOhms | 3 V | 44 nC | Enhancement | |||||
|
5,394
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 13A 11mOhm 44nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 18 mOhms | 44 nC | |||||||||
|
2,937
In-stock
|
Diodes Incorporated | MOSFET 60V P-Channel 6.8A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10.4 A | 55 mOhms | - 1 V | 44 nC | Enhancement | |||||
|
5,095
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC | 16 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 88 A | 9.9 mOhms | 2.5 V | 44 nC | ||||||
|
7,312
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | ||||
|
VIEW | IR / Infineon | MOSFET MOSFT PCh -150V 13A 580mOhm 44nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 295 mOhms | 44 nC | |||||||||
|
4,058
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 10 mOhms | 4 V | 44 nC | Enhancement | OptiMOS | ||||
|
1,854
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.0085 Ohm typ 40A STripFET VII | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 15 A | 270 mOhms | 4 V | 44 nC | ||||||
|
1,920
In-stock
|
IR / Infineon | MOSFET AUTO -150V 1 P-CH HEXFET 580mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | |||||||||
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 44 nC | Enhancement | CoolMOS | ||||
|
2,778
In-stock
|
IR / Infineon | MOSFET 1 P-CH -150V HEXFET 580mOhms 44nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 580 mOhms | 44 nC | Enhancement | ||||||
|
4,790
In-stock
|
IR / Infineon | MOSFET 100V AUTO GRADE 1 N-CH HEXFET | 16 V | Through Hole | TO-220-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 51 A | 8 mOhms | 44 nC | |||||||||
|
886
In-stock
|
STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 26 A | 120 mOhms | 4 V | 44 nC | Enhancement | |||||
|
2,402
In-stock
|
IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 84 A | 4.6 mOhms | 3 V | 44 nC | Enhancement | |||||
|
1,397
In-stock
|
onsemi | MOSFET NFET SO8FL 100V 104A 7.7M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 104 A | 6.5 mOhms | 2 V | 44 nC | Enhancement | |||||
|
2,477
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 11mOhms 44nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 13 A | 18 mOhms | 44 nC | Enhancement | ||||||
|
1,709
In-stock
|
IR / Infineon | MOSFET 60V, 60A, 9.0 mOhm 44 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 60 A | 7.3 mOhms | 2.1 V | 44 nC | Enhancement | StrongIRFET | ||||
|
1,952
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 24 A | 3.04 mOhms | 1.8 V | 44 nC | ||||||
|
2,105
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 60-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 32 A | 0.014 Ohms | 1.5 V | 44 nC | Enhancement | TrenchFET | ||||
|
1,424
In-stock
|
Infineon Technologies | MOSFET MOSFT P-Ch -150V -13A 580mOhm 44nC | 20 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 295 mOhms | 44 nC | |||||||||
|
554
In-stock
|
STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1.7 kV | 2.6 A | 7 Ohms | 3 V | 44 nC | Enhancement | |||||
|
2,258
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 40 V, 7 mOhm typ., 54 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 54 A | 7 mOhms | 2 V | 44 nC | Enhancement | |||||
|
186
In-stock
|
Fairchild Semiconductor | MOSFET PT5 100V/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 3.9 mOhms | 2 V | 44 nC | Enhancement | PowerTrench Power Clip | ||||
|
666
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | |||||||||
|
214
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V 0.190 16A MDmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 16 A | 220 mOhms | 3 V | 44 nC | ||||||
|
1,271
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 16 A | 115 mOhms | 4 V | 44 nC | ||||||
|
297
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -150V -13A 290mOhm 44nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 150 V | - 13 A | 290 mOhms | 44 nC | |||||||||
|
100
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_LEGACY | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 144 mOhms | 3.5 V | 44 nC | Enhancement | CoolMOS | ||||
|
304
In-stock
|
STMicroelectronics | MOSFET N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MO... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1700 V | 2.6 A | 13 Ohms | 3 V | 44 nC | Enhancement |