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Vgs - Gate-Source Voltage :
Id - Continuous Drain Current :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
FQPF9N90CT
1+
$2.550
10+
$2.170
100+
$1.740
500+
$1.520
RFQ
1,021
In-stock
Fairchild Semiconductor MOSFET 900V N-Chan Advance Q-FET C-Series 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 8 A 1.4 Ohms Enhancement  
FQP9N90C
1+
$2.420
10+
$2.060
100+
$1.650
500+
$1.440
RFQ
1,049
In-stock
Fairchild Semiconductor MOSFET 900V N-Channel Adv Q-FET C-Series 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 8 A 1.4 Ohms Enhancement QFET
FQA11N90C-F109
GET PRICE
RFQ
30,700
In-stock
Fairchild Semiconductor MOSFET 900V N-Ch Q-FET advance C-Series 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 11 A 1.4 Ohms Enhancement QFET
FQA9N90C
GET PRICE
RFQ
81,000
In-stock
Fairchild Semiconductor MOSFET 900V N-Channel QFET 30 V Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 9 A 1.4 Ohms Enhancement QFET
IXTH6N90A
30+
$8.250
120+
$7.160
270+
$6.840
510+
$6.240
VIEW
RFQ
IXYS MOSFET 6 Amps 900V 1.4 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 6 A 1.4 Ohms Enhancement  
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