- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,159
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3.5 V | 93 nC | Enhancement | CoolMOS | ||||
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1,382
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3.5 V | 93 nC | Enhancement | CoolMOS | ||||
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545
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | ||||
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707
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | ||||
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395
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 46A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | ||||
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92
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 46A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | ||||
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170
In-stock
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IXYS | MOSFET MOSFET 650V/46A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 76 mOhms | 2.7 V | 75 nC | Enhancement | HiPerFET | ||||
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491
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | ||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 46A TO220-3 CoolMOS C7 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS |