- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,000
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Fairchild Semiconductor | MOSFET SuperFET3 650V 165 mOhm, TO220F PKG | +/- 30 V | Through Hole | TO-220F-3 | - 55 C | + 150 C | 1 Channel | N-Channel | 650 V | 19 A | 140 mOhms | 2.5 V | 35 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Channel 650V 0.16 Ohms 19A | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 19 A | 160 mOhms | Enhancement |
