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15 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB65R190C7
1+
$2.930
10+
$2.490
100+
$1.990
500+
$1.750
1000+
$1.450
RFQ
1,030
In-stock
Infineon Technologies MOSFET N-Ch 700V 49A D2PAK-2 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 13 A 168 mOhms 3 V 23 nC Enhancement CoolMOS
IPD65R190C7
1+
$2.880
10+
$2.450
100+
$1.960
500+
$1.710
2500+
$1.320
RFQ
5,060
In-stock
Infineon Technologies MOSFET HIGH POWER_NEW 20 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 13 A 168 mOhms 3 V 23 nC Enhancement CoolMOS
IPB65R190C7ATMA1
1+
$2.930
10+
$2.490
100+
$1.990
500+
$1.750
1000+
$1.450
RFQ
734
In-stock
Infineon Technologies MOSFET N-Ch 700V 49A D2PAK-2 20 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 13 A 168 mOhms 3 V 23 nC Enhancement CoolMOS
IPP65R190C7
1+
$2.000
10+
$2.000
100+
$1.000
500+
$1.000
RFQ
1,400
In-stock
Infineon Technologies MOSFET HIGH POWER_NEW 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 13 A 168 mOhms 3 V 23 nC Enhancement CoolMOS
IPW65R190C7
1+
$3.490
10+
$2.970
100+
$2.570
250+
$2.440
RFQ
79
In-stock
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 13 A 168 mOhms 3 V 23 nC Enhancement CoolMOS
STP18NM60ND
1+
$4.720
10+
$4.010
100+
$3.480
250+
$3.300
RFQ
230
In-stock
STMicroelectronics MOSFET N-CH 600V 0.25Ohm 13A FDMesh II 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 13 A 290 mOhms 4 V 34 nC    
IPW65R190C7XKSA1
1+
$3.490
10+
$2.970
100+
$2.570
250+
$2.440
RFQ
240
In-stock
Infineon Technologies MOSFET HIGH POWER_NEW +/- 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 13 A 168 mOhms 3 V 23 nC Enhancement CoolMOS
IPD65R190C7ATMA1
1+
$2.880
10+
$2.450
100+
$1.960
500+
$1.710
2500+
$1.320
RFQ
2,500
In-stock
Infineon Technologies MOSFET HIGH POWER_NEW 20 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 13 A 168 mOhms 3 V 23 nC Enhancement CoolMOS
IPP65R190C7FKSA1
1+
$2.000
10+
$2.000
100+
$1.000
500+
$1.000
RFQ
1,400
In-stock
Infineon Technologies MOSFET HIGH POWER_NEW 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 13 A 168 mOhms 3 V 23 nC Enhancement CoolMOS
STB18NM60ND
1+
$5.570
10+
$4.480
100+
$4.080
250+
$3.680
1000+
$2.790
RFQ
764
In-stock
STMicroelectronics MOSFET N-CH 600V 0.25Ohm 13A FDmesh II 25 V SMD/SMT TO-263-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 650 V 13 A 290 mOhms 4 V 34 nC    
STF18NM60N
1000+
$1.120
3000+
$1.040
5000+
$1.000
10000+
$0.931
VIEW
RFQ
STMicroelectronics MOSFET N-channel 600 V 0.27ohm 13A MDmesh 25 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 650 V 13 A 260 mOhms 3 V 35 nC    
STF18NM60ND
1000+
$1.400
2000+
$1.330
5000+
$1.220
10000+
$1.200
VIEW
RFQ
STMicroelectronics MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II 25 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 13 A 290 mOhms 4 V 34 nC    
TK13A65U(STA4,Q,M)
GET PRICE
RFQ
46,500
In-stock
Toshiba MOSFET N-Ch FET RDS .32Ohm Yfs 8.0s VDS 650V   SMD/SMT TO-220FP-3       1 Channel Si N-Channel 650 V 13 A 380 mOhms        
TK13J65U(F)
VIEW
RFQ
Toshiba MOSFET N-Ch MOS 13A 650V 170W 950pF 0.38   Through Hole TO-3PN-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 13 A 380 mOhms   17 nC Enhancement  
STW18NM60ND
1+
$5.880
10+
$4.730
100+
$4.300
250+
$3.880
RFQ
209
In-stock
STMicroelectronics MOSFET N-CH 600V 0.25Ohm 13A Fdmesh II 25 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 13 A 290 mOhms 4 V 34 nC    
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