- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,415
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 20 nC | Enhancement | CoolMOS | ||||
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GET PRICE |
15,080
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | |||
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3,500
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | ||||
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980
In-stock
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IR / Infineon | MOSFET N-Ch 650V 6A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 20 nC | Enhancement | |||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 6A TO220FP CoolMOS CFD2 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6 A | 660 mOhms | 22 nC | CoolMOS | ||||||
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445
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6A TO220-3 CoolMOS CFD2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | ||||
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405
In-stock
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IR / Infineon | MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 20 nC | Enhancement | |||||
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126
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6A TO247-3 CoolMOS CFD2 | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 6 A | 660 mOhms | 4 V | 22 nC | CoolMOS | |||||||
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430
In-stock
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Toshiba | MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm | SMD/SMT | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 6 A | 1.11 Ohms | |||||||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 6A TO220-3 CoolMOS CFD2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | ||||
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970
In-stock
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IR / Infineon | MOSFET N-Ch 650V 6A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 20 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 6A DPAK-2 | +/- 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 20 nC | Enhancement | CoolMOS | ||||
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1,244
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2 | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 660 mOhms | 4 V | 22 nC | CoolMOS |