- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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910
In-stock
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STMicroelectronics | MOSFET N-channel 650 V 0.175 17A MDmesh | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 150 mOhms | 50 nC | ||||
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820
In-stock
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STMicroelectronics | MOSFET N-channel 650 V MDMesh M5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 150 mOhms | 50 nC | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 168 mOhms | 3 V | 46 nC | |||||
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VIEW | Toshiba | MOSFET N-Ch MOS 17A 650V 190W 1450pF 0.26 | Through Hole | TO-3PN-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 260 mOhms | ||||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 17A MDmesh II | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17 A | 190 mOhms |
