- Manufacture :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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725
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 41A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
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835
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 41A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
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245
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET SuperFET II | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.2 A | 199 mOhms | SuperFET II | |||||||
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272
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
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342
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | ||||
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266
In-stock
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Infineon Technologies | MOSFET 650V CoolMOS C7 Power Trans; 225mOhm | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS |