- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
-
- 10 A (2)
- 11 A (12)
- 12 A (6)
- 13 A (9)
- 13.7 A (3)
- 13.8 A (1)
- 130 A (1)
- 14 A (2)
- 15 A (4)
- 16 A (2)
- 17 A (1)
- 18 A (9)
- 20 A (3)
- 20.2 A (1)
- 20.6 A (1)
- 21 A (2)
- 24 A (12)
- 28 A (3)
- 3 A (1)
- 32 A (3)
- 33 A (7)
- 34 A (7)
- 35 A (3)
- 4 A (6)
- 4.2 A (1)
- 42 A (1)
- 46 A (6)
- 48 A (1)
- 5 A (4)
- 5.5 A (3)
- 52 A (1)
- 54 A (1)
- 6.1 A (1)
- 6.7 A (1)
- 64 A (1)
- 69 A (1)
- 7 A (5)
- 7.3 A (1)
- 75 A (4)
- 76 A (2)
- 8 A (2)
- 88 A (1)
- 9 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.058 Ohms (1)
- 1 Ohms (1)
- 1.15 Ohms (2)
- 1.3 Ohms (1)
- 1.35 Ohms (4)
- 1.5 Ohms (1)
- 110 mOhms (1)
- 111 mOhms (6)
- 115 mOhms (2)
- 130 mOhms (3)
- 135 mOhms (4)
- 14 mOhms (1)
- 160 mOhms (1)
- 168 mOhms (11)
- 17 mOhms (4)
- 173 mOhms (2)
- 184 mOhms (1)
- 190 mOhms (1)
- 199 mOhms (6)
- 2.1 Ohms (2)
- 210 mOhms (4)
- 220 mOhms (1)
- 228 mOhms (1)
- 230 mOhms (1)
- 24 mOhms (1)
- 250 mOhms (3)
- 260 mOhms (1)
- 280 mOhms (1)
- 33 mOhms (1)
- 360 mOhms (2)
- 380 mOhms (8)
- 40 mOhms (8)
- 401 mOhms (1)
- 41 mOhms (1)
- 424 mOhms (1)
- 430 mOhms (1)
- 51 mOhms (1)
- 58 mOhms (9)
- 600 mOhms (1)
- 62 mOhms (2)
- 63 mOhms (1)
- 650 mOhms (2)
- 67 mOhms (1)
- 670 mOhms (3)
- 68 mOhms (1)
- 750 mOhms (1)
- 780 mOhms (3)
- 80 mOhms (1)
- 84 mOhms (10)
- 88 mOhms (6)
- 90 mOhms (1)
- 900 mOhms (2)
- 93 mOhms (3)
- 96 mOhms (1)
- Qg - Gate Charge :
-
- 10 nC (5)
- 100 nC (1)
- 11 nC (1)
- 110 nC (1)
- 113 nC (1)
- 115 nC (1)
- 12.5 nC (3)
- 126 nC (1)
- 13.5 nC (2)
- 143 nC (1)
- 15 nC (2)
- 17 nC (6)
- 19.5 nC (1)
- 20 nC (7)
- 204 nC (1)
- 21 nC (1)
- 215 nC (4)
- 229 nC (1)
- 23 nC (13)
- 234 nC (1)
- 27 nC (1)
- 29 nC (1)
- 33.3 nC (2)
- 35 nC (14)
- 36 nC (1)
- 363 nC (1)
- 39 nC (1)
- 40 nC (3)
- 42 nC (1)
- 43 nC (3)
- 44 nC (1)
- 45 nC (14)
- 46 nC (1)
- 54 nC (4)
- 56 nC (3)
- 57 nC (4)
- 62.5 nC (1)
- 63 nC (1)
- 64 nC (11)
- 73 nC (1)
- 82 nC (1)
- 88 nC (1)
- 9 nC (2)
- 9.8 nC (4)
- 93 nC (8)
- 98 nC (1)
140 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
669
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 650V, 110mohm, FRFET | 20 V, 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 35 A | 110 mOhms | 3 V | 98 nC | Enhancement | SuperFET II FRFET | |||
|
|
464
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 54 A | 184 mOhms | 3 V | 126 nC | Enhancement | SuperFET II | |||
|
|
5,600
In-stock
|
Fairchild Semiconductor | MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET | 20 V, 30 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 41 mOhms | 3 V | 229 nC | Enhancement | SuperFET II UniFET FRFET | |||
|
|
605
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 76 A | 96 mOhms | 3 V | 234 nC | Enhancement | SuperFET II | |||
|
|
545
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
|
|
316
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 75A TO247-3 CoolMOS C7 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
|
|
1,304
In-stock
|
Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
|
|
707
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
|
|
236
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
|
|
1,030
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
338
In-stock
|
STMicroelectronics | MOSFET Nchanl 600 V 78 Ohm typ 34 A Pwr MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | |||||
|
|
528
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
|
|
GET PRICE |
5,600
In-stock
|
STMicroelectronics | MOSFET N-chanel 600 V 0.078 Ohm typ 34 A | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | ||||
|
|
983
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 24 A | 130 mOhms | 3 V | 43 nC | Enhancement | |||||
|
|
821
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.078Ohm typ. 34A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 34 A | 88 mOhms | 3 V | 57 nC | |||||
|
|
395
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 46A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
|
|
1,909
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 15A VSON-4 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 115 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
|
|
977
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
|
|
65
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | ISOTOP-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 88 A | 24 mOhms | 3 V | 204 nC | Enhancement | ||||
|
|
102
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 75A TO247-4 | +/- 20 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 75 A | 17 mOhms | 3 V | 215 nC | Enhancement | CoolMOS | |||
|
|
5,070
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4 A | 1.35 Ohms | 3 V | 9.8 nC | MDmesh | ||||
|
|
53,920
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.2A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.2 A | 1 Ohms | 3 V | 15 nC | CoolMOS | ||||
|
|
937
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 34 A | 93 mOhms | 3 V | 56 nC | Enhancement | |||||
|
|
254
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-3PF-3 | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 67 mOhms | 3 V | 82 nC | Enhancement | ||||||
|
|
1,433
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 V 0.09 Ohm 28 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 28 A | 90 mOhms | 3 V | 62.5 nC | Enhancement | MDmesh | |||
|
|
1,440
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 160 mOhms | 3 V | 36 nC | Enhancement | MDmesh | |||
|
|
260
In-stock
|
IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 64 A | 51 mOhms | 3 V | 143 nC | Enhancement | ||||
|
|
5,060
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
871
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 380 mOhms | 3 V | 17 nC | |||||
|
|
235
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 33 A | 58 mOhms | 3 V | 64 nC | Enhancement | CoolMOS |
