- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
-
- 10.1 A (1)
- 10.6 A (2)
- 11.1 A (1)
- 13.7 A (1)
- 13.8 A (6)
- 15.1 A (1)
- 16.1 A (4)
- 17.3 A (2)
- 19 A (1)
- 20.2 A (4)
- 27.6 A (2)
- 3.1 A (1)
- 3.2 A (2)
- 38 A (8)
- 4.3 A (1)
- 4.5 A (4)
- 44 A (3)
- 49.2 A (1)
- 5.2 A (2)
- 5.3 A (1)
- 5.8 A (3)
- 53.5 A (2)
- 57.7 A (2)
- 6.8 A (2)
- 65 A (1)
- 7 A (3)
- 7.3 A (5)
- 7.8 A (2)
- 83.2 A (2)
- 9.3 A (2)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (2)
- 1.02 Ohms (1)
- 1.26 Ohms (2)
- 1.5 Ohms (1)
- 140 mOhms (1)
- 170 mOhms (6)
- 220 mOhms (1)
- 230 mOhms (4)
- 250 mOhms (6)
- 3.51 Ohms (1)
- 33 mOhms (2)
- 340 mOhms (2)
- 35.4 mOhms (1)
- 350 mOhms (1)
- 360 mOhms (1)
- 430 mOhms (1)
- 460 mOhms (1)
- 530 mOhms (1)
- 540 mOhms (6)
- 55 mOhms (1)
- 550 mOhms (1)
- 594 mOhms (2)
- 63 mOhms (2)
- 640 mOhms (1)
- 650 mOhms (1)
- 660 mOhms (1)
- 67 mOhms (4)
- 70 mOhms (1)
- 850 mOhms (1)
- 855 mOhms (4)
- 89 mOhms (8)
- 890 mOhms (2)
- 94 mOhms (2)
- Tradename :
72 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,240
In-stock
|
Fairchild Semiconductor | MOSFET 650V 44A N-Channel SuperFET MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | ||||
|
1,717
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET3 650V 70mOhm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 44 A | 70 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | ||||
|
542
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | ||||
|
334
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 53.5 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | ||||
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 44 nC | Enhancement | CoolMOS | ||||
|
385
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 57.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 57.7 A | 67 mOhms | 2.5 V | 138 nC | Enhancement | CoolMOS | ||||
|
163
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||||
|
206
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | ||||
|
437
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 115A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | ||||
|
2,360
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | ||||
|
2,490
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | ||||
|
303
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET3 650V 67 mOhm | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 44 A | 67 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | ||||
|
2,427
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 3.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.26 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||||
|
500
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 20.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.2 A | 170 mOhms | 2.5 V | 73 nC | Enhancement | CoolMOS | ||||
|
3,222
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.3A IPAK-3 | 20 V | SMD/SMT | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.3 A | 1 Ohms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | ||||
|
340
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 38A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | ||||
|
349
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 38A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | ||||
|
477
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
|
1,280
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15.1 A | 360 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | ||||
|
10,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 38A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 38 A | 89 mOhms | 2.5 V | 127 nC | Enhancement | CoolMOS | ||||
|
423
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 13.8A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||||
|
370
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 13.8A TO220FP-3 CoolMOS C6 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | ||||
|
309
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 20.2A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20.2 A | 170 mOhms | 2.5 V | 73 nC | Enhancement | CoolMOS | ||||
|
490
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 7.3A TO220-3 CoolMOS C6 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.3 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS | ||||
|
GET PRICE |
8,750
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 7A TO220FP-3 | 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 650 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
|
2,789
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.3 A | 3.51 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||||
|
426
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 4.5A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | ||||
|
1,009
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 3.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.26 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | ||||
|
540
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 4.5A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | ||||
|
21,400
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.1 A | 540 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS |