- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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101
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh M5 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 198 mOhms | 31 nC | ||||||
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14,000
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.198 Ohm 15 A MDmesh M5 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 198 mOhms | 31 nC | ||||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 65V 12A MDMESH | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 279 mOhms | 4 V | 31 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.198 Ohm 15A MDmesh FET | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 9.4 A | 220 mOhms | 5 V | 31 nC | |||||||
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1,045
In-stock
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STMicroelectronics | MOSFET N-Ch MDMesh M5 650V 0.270 Ohm 12A D2PAK | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 12 A | 270 mOhms | 4 V | 31 nC |