- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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618
In-stock
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STMicroelectronics | MOSFET N-chanel 600 V 0.120 Ohm typ 24 A | 25 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
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1,433
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.09 Ohm 28 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 28 A | 90 mOhms | 3 V | 62.5 nC | Enhancement | MDmesh | |||
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180
In-stock
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STMicroelectronics | MOSFET Nchanl 600V 0120 Ohm typ 24 A Pwr MOSFET | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
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194
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 0 120 Ohm typ 24 A | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC | |||||||
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1,000
In-stock
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STMicroelectronics | MOSFET Nchnl 600 V 0120 Ohm typ 24 A Pwr MOSFET | 25 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 23 A | 150 mOhms | 4 V | 62.5 nC |
