- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 17.5A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | ||||
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940
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 57.2A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | ||||
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979
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2 | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 190 mOhms | 4 V | 68 nC | CoolMOS | |||||||
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GET PRICE |
8,400
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 17.5A TO247-3 CoolMOS CFD2 | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 190 mOhms | 4 V | 68 nC | CoolMOS | ||||||
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160
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 17.5A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | ||||
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899
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 17.5A TO220FP CoolMOS CFD2 | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 190 mOhms | 4 V | 68 nC | CoolMOS | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 17.5A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 17.5A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 57.2A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS |