- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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900
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.5A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 650 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS | |||
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1,009
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 800mA IPAK-3 CoolMOS C3 | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 650 V | 800 mA | 6 Ohms | Enhancement | CoolMOS |
