- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,603
In-stock
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Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||
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5,400
In-stock
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Diodes Incorporated | MOSFET N-Ch. 50V 500mA AEC-Q101 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 800 mV | 0.6 nC | Enhancement | |||
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8,997
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 41V-60V,SOT23,3K | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.8 Ohms | 800 pC | Enhancement | ||||
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359
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 1.3 Ohms | 400 mV | 800 pC | Enhancement | |||
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VIEW | Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 500 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement |
