- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
10,071
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 94 A | 5.7 mOhms | Enhancement | PowerTrench | ||||||
|
142
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 94 A | 55 mOhms | Polar2 HiPerFET | |||||||
|
GET PRICE |
51,300
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 94A 23mOhm 180nCAC | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 94 A | 23 mOhms | 180 nC | Enhancement | |||||
|
1,149
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 94A 7.5mOhm 63nC | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | |||||||||
|
453
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 94A 7.5mOhm 63nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | |||||||||
|
611
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | |||||||
|
45
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 94 A | 36 mOhms | HyperFET | ||||||||||
|
GET PRICE |
4,600
In-stock
|
IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 94 A | 55 mOhms | Polar2 HiPerFET | ||||||
|
384
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | |||||||
|
10
In-stock
|
IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 94 A | 36 mOhms | 3 V | 102 nC | Enhancement | HyperFET | ||||
|
VIEW | IXYS | MOSFET N-Channel: Power MOSFET w/Fast Diode | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 94 A | 36 mOhms | HyperFET | ||||||||||
|
VIEW | IXYS | MOSFET Trench HiperFET Power MOSFET | Through Hole | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 94 A | 36 mOhms | HiPerFET | ||||||||||
|
VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 63 nC | Enhancement | |||||||
|
706
In-stock
|
Infineon Technologies | MOSFET 55V SINGLE N-CH HEXFET PWR MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 94 A | 7.5 mOhms | 4 V | 63 nC | Enhancement |