- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,743
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 900 mOhms | 3.5 V | 13 nC | SuperFET II | ||||
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426
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 4.5A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
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540
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 4.5A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
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1,490
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 4.5A IPAK-3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 700V 4.5A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 855 mOhms | 2.5 V | 15.3 nC | Enhancement | CoolMOS | |||
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900
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.5A IPAK-3 CoolMOS C3 | 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 650 V | 4.5 A | 950 mOhms | Enhancement | CoolMOS |
