- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
33 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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1,134
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 42 mOhms | 3 V | 121 nC | Enhancement | |||||
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10,604
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 42 mOhms | 2 V | 12 nC | Enhancement | OptiMOS | |||
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1,617
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 45.6 A | 42 mOhms | Enhancement | QFET | |||||
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43,970
In-stock
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Fairchild Semiconductor | MOSFET PT5 150/25V Pch Pwr Trench MOSFET | +/- 25 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 22 A | 42 mOhms | - 4 V | 63 nC | Enhancement | PowerTrench | |||
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8,663
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 24A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 42 mOhms | 2 V | 20 nC | Enhancement | OptiMOS | |||
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544
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 42 mOhms | 4 V | 121 nC | Enhancement | |||||
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2,638
In-stock
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Infineon Technologies | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 26 nC | |||||||||
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1,658
In-stock
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IR / Infineon | MOSFET MOSFT 150V 43A 42mOhm 133.3nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | ||||||||
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614
In-stock
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Fairchild Semiconductor | MOSFET 43a 150V 0.042 Ohm Logic Level N-Ch | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | Enhancement | UltraFET | |||||
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613
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel PowerTrench | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 42 mOhms | Enhancement | PowerTrench | |||||
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892
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 42mOhms 133.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | Enhancement | |||||
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5,400
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 43A 42mOhm 144.4nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | ||||||||
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2,856
In-stock
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onsemi | MOSFET -20V -6.7A P-Channel | 8 V | SMD/SMT | ChipFET-8 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.7 A | 42 mOhms | Enhancement | ||||||||
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1,534
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 15.7 A | 42 mOhms | Enhancement | QFET | |||||
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1,774
In-stock
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Fairchild Semiconductor | MOSFET 30V 4A 56OHM NCH POWER TRENCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 42 mOhms | Enhancement | PowerTrench | |||||
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494
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 16 V | SMD/SMT | TO-263-3 | - 65 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 26 A | 42 mOhms | Enhancement | ||||||
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4,700
In-stock
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Fairchild Semiconductor | MOSFET 150V N-Channel QFET | 25 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 42 mOhms | Enhancement | QFET | |||||
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700
In-stock
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IR / Infineon | MOSFET MOSFT 150V 43A 42mOhm 133.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | ||||||||
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167
In-stock
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Infineon Technologies | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 42 mOhms | 133.3 nC | Enhancement | ||||||
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50
In-stock
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IXYS | MOSFET 76 Amps 250V 39 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 42 mOhms | 5 V | 92 nC | Enhancement | Trench | |||
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8,098
In-stock
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Toshiba | MOSFET SM Sig N-CH MOS 30V 6A 20V VGSS | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 42 mOhms | |||||||||
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520
In-stock
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Texas instruments | MOSFET 30V, N-Channel NexFET Power Mosfet | - 8 V, + 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 42 mOhms | 900 mV | 2.1 nC | Enhancement | NexFET | |||
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1,050
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | ||||
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1,000
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 21 A | 42 mOhms | Enhancement | QFET | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 200V 24A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 42 mOhms | 2 V | 20 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-Ch MOS 18A 100V 71W 0.042 Ohm | Through Hole | TO-220-3 | 1 Channel | Si | N-Channel | 100 V | 18 A | 42 mOhms | |||||||||||
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VIEW | STMicroelectronics | MOSFET N-CH CLMP 12A FULL PROTCT SAFeFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 33 V | 120 A | 42 mOhms | Enhancement | ||||||
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4,901
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 42 mOhms | 2 V | 12 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 42 mOhms | 5 V | 26 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 75 Amps 300V 0.042 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 75 A | 42 mOhms | Enhancement |
