- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,134
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 42 mOhms | 3 V | 121 nC | Enhancement | ||||||
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10,604
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 42 mOhms | 2 V | 12 nC | Enhancement | OptiMOS | ||||
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43,970
In-stock
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Fairchild Semiconductor | MOSFET PT5 150/25V Pch Pwr Trench MOSFET | +/- 25 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 22 A | 42 mOhms | - 4 V | 63 nC | Enhancement | PowerTrench | ||||
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8,663
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 24A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 42 mOhms | 2 V | 20 nC | Enhancement | OptiMOS | ||||
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544
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 42 mOhms | 4 V | 121 nC | Enhancement | ||||||
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613
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel PowerTrench | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 42 mOhms | Enhancement | PowerTrench | ||||||
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1,774
In-stock
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Fairchild Semiconductor | MOSFET 30V 4A 56OHM NCH POWER TRENCH | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 42 mOhms | Enhancement | PowerTrench | ||||||
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50
In-stock
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IXYS | MOSFET 76 Amps 250V 39 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 42 mOhms | 5 V | 92 nC | Enhancement | Trench | ||||
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520
In-stock
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Texas instruments | MOSFET 30V, N-Channel NexFET Power Mosfet | - 8 V, + 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 42 mOhms | 900 mV | 2.1 nC | Enhancement | NexFET | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 200V 24A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 42 mOhms | 2 V | 20 nC | Enhancement | |||||
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4,901
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 21A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 21 A | 42 mOhms | 2 V | 12 nC | Enhancement | OptiMOS | ||||
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VIEW | IXYS | MOSFET 75 Amps 300V 0.042 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 75 A | 42 mOhms | Enhancement |