- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,351
In-stock
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Infineon Technologies | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 35 A | 22.5 mOhms | 4 V | 39 nC | ||||||
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1,994
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 8 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 9 A | 22.5 mOhms | 400 mV | 22 nC | Enhancement | |||||
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1,380
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 60A 13.5mOhm 23nC LogLvl | 16 V | Through Hole | TO-251-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | |||||||||
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1,728
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement | |||||||
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927
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement | ||||||
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784
In-stock
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IR / Infineon | MOSFET MOSFT 55V 51A 24nC 13.5mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 24 nC | |||||||||
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1,343
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 51A 13.5mOhm 24nC LogLvl | 16 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 24 nC | |||||||||
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1,585
In-stock
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Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 24 nC | ||||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement | |||||||
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VIEW | IXYS | MOSFET 80 Amps 150V 0.0225 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 80 A | 22.5 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 75 Amps 150V 0.0225 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 75 A | 22.5 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 80 Amps 150V 0.0225 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 80 A | 22.5 mOhms | Enhancement | HyperFET | ||||||
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670
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13.5mOhms 24nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 1 V to 3 V | 24 nC | Enhancement | |||||
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3
In-stock
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IR / Infineon | MOSFET MOSFT 55V 51A 13.5mOhm 24nC LogLvl | 16 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 24 nC | |||||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 22.5 mOhms | 23 nC | Enhancement |