- Manufacture :
- Mounting Style :
- Package / Case :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
784
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 51A 24nC 13.5mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 24 nC | |||||||
|
|
1,343
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 51A 13.5mOhm 24nC LogLvl | 16 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 24 nC | |||||||
|
|
1,585
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 13.5mOhms | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 24 nC | ||||||||
|
|
670
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 13.5mOhms 24nC | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 1 V to 3 V | 24 nC | Enhancement | |||
|
|
3
In-stock
|
IR / Infineon | MOSFET MOSFT 55V 51A 13.5mOhm 24nC LogLvl | 16 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 51 A | 22.5 mOhms | 24 nC |
