- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
4,425
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 167 nC | Enhancement | CoolMOS | ||
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1,338
In-stock
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STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 38 A | 72 mOhms | 4 V | 56 nC | Enhancement | ||||
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1,738
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 400 V, 0.058 Ohm typ., 39 A MDmes... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 400 V | 38 A | 72 mOhms | 4 V | 56 nC | Enhancement | |||||
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GET PRICE |
11,566
In-stock
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onsemi | MOSFET PFET TSOP6 60V 2.5A 111MO | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 72 mOhms | - 3 V | 18.1 nC | Enhancement | |||
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9,460
In-stock
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onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | |||||
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GET PRICE |
30,120
In-stock
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onsemi | MOSFET PFET U8FL 60V | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 20 A | 72 mOhms | - 1 V to - 3 V | 25 nC | ||||
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160
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 72 mOhms | 3.5 V | 95 nC | SuperFET II | ||||
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10,285
In-stock
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Diodes Incorporated | MOSFET P-Channel 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3 A | 72 mOhms | Enhancement | ||||||
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226
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 167 nC | Enhancement | CoolMOS | |||
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72
In-stock
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IXYS | MOSFET 500V 80A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 45 A | 72 mOhms | Enhancement | HyperFET | |||||
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3,190
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | |||
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52
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/50A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 72 mOhms | 200 nC | HyperFET | |||||||
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2,198
In-stock
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Diodes Incorporated | MOSFET N-Channel | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 28 V | 3.8 A | 72 mOhms | Enhancement | ||||||
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11,300
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | |||
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27
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgs 292pF 3.8nC | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 3.4 A | 72 mOhms | 400 mV | 3.8 nC | Enhancement | ||||
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5,261
In-stock
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Nexperia | MOSFET 60V single N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.4 A | 72 mOhms | 1.3 V | 9.2 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 72 Amps 550V 0.07 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 72 Amps 550 V 0.07 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 41 Amps 250V 0.072 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 41 A | 72 mOhms | Enhancement | ||||||
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4,730
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | SCH-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.5 A | 72 mOhms |
