- Vgs - Gate-Source Voltage :
- Package / Case :
- Minimum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,425
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 167 nC | Enhancement | CoolMOS | |||
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1,738
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 400 V, 0.058 Ohm typ., 39 A MDmes... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 400 V | 38 A | 72 mOhms | 4 V | 56 nC | Enhancement | ||||||
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160
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Fast ver | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 72 mOhms | 3.5 V | 95 nC | SuperFET II | |||||
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226
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 CoolMOS CFD2 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 167 nC | Enhancement | CoolMOS | ||||
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3,190
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | ||||
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52
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/50A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 50 A | 72 mOhms | 200 nC | HyperFET | ||||||||
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11,300
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 43.3A TO247-3 | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 43.3 A | 72 mOhms | 3.5 V | 161 nC | Enhancement | CoolMOS | ||||
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VIEW | IXYS | MOSFET 72 Amps 550V 0.07 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 72 A | 72 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 41 Amps 250V 0.072 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 41 A | 72 mOhms | Enhancement |