- Manufacture :
- Mounting Style :
- Minimum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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455
In-stock
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Infineon Technologies | MOSFET | 16 V | Through Hole | TO-251-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.5 A | 490 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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422
In-stock
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onsemi | MOSFET -20V -760mA P-Channel | 6 V | SMD/SMT | SC-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 760 mA | 490 mOhms | Enhancement | ||||||
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9
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 490 mOhms | 140 nC | HyperFET | |||||||
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17,950
In-stock
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onsemi | MOSFET -20V -760mA PChannel | 6 V | SMD/SMT | SC-75-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 760 mA | 490 mOhms | Enhancement | ||||||
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24,950
In-stock
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Infineon Technologies | MOSFET | 16 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 8.5 A | 490 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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500
In-stock
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Infineon Technologies | MOSFET | 16 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8.5 A | 490 mOhms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
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VIEW | Nexperia | MOSFET N-Chan 30V 900mA | 8 V | SMD/SMT | DFN1006B-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 900 mA | 490 mOhms | |||||||||
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VIEW | Toshiba | MOSFET N-ch 500V 20A 0.480 ohm | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 15 A | 490 mOhms | Enhancement |
