- Manufacture :
- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | |
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422
In-stock
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onsemi | MOSFET -20V -760mA P-Channel | 6 V | SMD/SMT | SC-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 760 mA | 490 mOhms | Enhancement | ||||
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17,950
In-stock
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onsemi | MOSFET -20V -760mA PChannel | 6 V | SMD/SMT | SC-75-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 760 mA | 490 mOhms | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-ch 500V 20A 0.480 ohm | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 15 A | 490 mOhms | Enhancement |