- Mounting Style :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
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31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
9,440
In-stock
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STMicroelectronics | MOSFET N-channel 600 V Mdmesh II Power | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 165 mOhms | Enhancement | |||||
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7,880
In-stock
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STMicroelectronics | MOSFET N-channel 600 V 20 A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 165 mOhms | 3 V | 60 nC | |||||
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10,376
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 165 mOhms | 9.5 nC | ||||||||
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5,332
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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999
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 600V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 165 mOhms | 3 V | 60 nC | |||||
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2,630
In-stock
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STMicroelectronics | MOSFET N-channel 250 V 17A STripFET II | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | 3 V | 29.5 nC | Enhancement | ||||
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2,800
In-stock
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IR / Infineon | MOSFET MOSFT 200V 14A 235mOhm 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 165 mOhms | 25 nC | Enhancement | ||||||
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10,175
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 165 mOhms | 9.5 nC | ||||||||
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307
In-stock
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Fairchild Semiconductor | MOSFET 600V 23A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 165 mOhms | 2.5 V | 57 nC | Enhancement | SuperFET II | |||
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1,481
In-stock
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STMicroelectronics | MOSFET NCh 30V 0.0032Ohm 20A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | Enhancement | ||||||
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1,957
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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1,194
In-stock
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STMicroelectronics | MOSFET N-Ch 250V 0.165 Ohm 17A 90W STripFET II | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | Enhancement | ||||||
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488
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 20 A | 165 mOhms | 2 V | - | Enhancement | |||||
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196
In-stock
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Fairchild Semiconductor | MOSFET 600V 23A N-Chnl SuperFET Easy-Drive | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 165 mOhms | 2.5 V | 57 nC | Enhancement | SuperFET II | |||
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1,345
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -3.8A 98mOhm 11nC | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 165 mOhms | 11 nC | ||||||||
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65
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 21A TO247-3 CoolMOS CP | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 21 A | 165 mOhms | Enhancement | CoolMOS | |||||
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253
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 20 A | 165 mOhms | 2 V | - | Enhancement | |||||
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40
In-stock
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IXYS | MOSFET 24 Amps 600V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 165 mOhms | Enhancement | CoolMOS | |||||
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30
In-stock
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IXYS | MOSFET 15 Amps 600V 0.165 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15 A | 165 mOhms | Enhancement | CoolMOS | |||||
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25
In-stock
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IXYS | MOSFET N-Channel Super Coolmos Power MOSFET | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15 A | 165 mOhms | 3 V | 40 nC | Enhancement | CoolMOS, HiPerDyn | |||
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34
In-stock
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IXYS | MOSFET 24 Amps 600V | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 165 mOhms | Enhancement | CoolMOS | |||||||
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10
In-stock
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IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 165 mOhms | 5 V | 70 nC | Enhancement | PolarHV | |||
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35,955
In-stock
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onsemi | MOSFET PFET SC70 30V TR | 12 V | SMD/SMT | SC-70-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.3 A | 165 mOhms | Enhancement | ||||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 250V STripFET II Mosfet | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | Enhancement | ||||||
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500
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 21A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 21 A | 165 mOhms | 9 nC | Enhancement | CoolMOS | ||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/37A | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 800 V | 37 A | 165 mOhms | 185 nC | HyperFET | |||||||
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VIEW | IXYS | MOSFET 24 Amps 600V | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 8.5 A | 165 mOhms | Enhancement | CoolMOS | |||||
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VIEW | IXYS | MOSFET 30.0 Amps 500 V 0.2 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 165 mOhms | 5 V | 70 nC | Enhancement | PolarHV | |||
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VIEW | IXYS | MOSFET 44 Amps 800V 0.145 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 165 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 44 Amps 800V 0.165W Rds | 20 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 165 mOhms | Enhancement | HyperFET |
