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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode Tradename
IPW60R165CP
1+
$4.610
10+
$3.920
100+
$3.400
250+
$3.230
RFQ
65
In-stock
Infineon Technologies MOSFET N-Ch 650V 21A TO247-3 CoolMOS CP 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 21 A 165 mOhms   Enhancement CoolMOS
IXKP24N60C5
1+
$5.190
10+
$4.410
100+
$3.830
250+
$3.630
RFQ
40
In-stock
IXYS MOSFET 24 Amps 600V 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 24 A 165 mOhms   Enhancement CoolMOS
IXKC15N60C5
1+
$5.640
10+
$4.800
100+
$4.160
250+
$3.950
RFQ
30
In-stock
IXYS MOSFET 15 Amps 600V 0.165 Rds 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 15 A 165 mOhms   Enhancement CoolMOS
IXKH24N60C5
1+
$5.910
10+
$5.020
100+
$4.350
250+
$4.130
RFQ
34
In-stock
IXYS MOSFET 24 Amps 600V 20 V Through Hole TO-247-3     Tube 1 Channel Si N-Channel 600 V 24 A 165 mOhms   Enhancement CoolMOS
IPA60R165CP
1+
$3.900
10+
$3.310
100+
$2.870
250+
$2.730
RFQ
500
In-stock
Infineon Technologies MOSFET N-Ch 600V 21A TO220FP-3 CoolMOS CP 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 21 A 165 mOhms 9 nC Enhancement CoolMOS
IXKP24N60C5M
50+
$4.440
100+
$3.850
250+
$3.650
500+
$3.280
VIEW
RFQ
IXYS MOSFET 24 Amps 600V 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 8.5 A 165 mOhms   Enhancement CoolMOS
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