- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 1.5 A (1)
- - 1.9 A (1)
- - 1.95 A (1)
- - 10.3 A (1)
- - 10.4 A (2)
- - 10.5 A (2)
- - 11.5 A (1)
- - 12 A (1)
- - 15.2 A (1)
- - 16.1 A (1)
- - 196 mA (1)
- - 2.2 A (1)
- - 2.3 A (1)
- - 2.5 A (1)
- - 23.6 A (1)
- - 3 A (1)
- - 3.4 A (1)
- - 3.6 A (1)
- - 3.8 A (1)
- - 3.8 A, - 5.6 A (1)
- - 4.2 A (1)
- - 4.5 A (1)
- - 4.6 A (1)
- - 4.8 A (1)
- - 6 A (1)
- - 6.6 A (1)
- - 7.3 A (2)
- - 7.7 A (1)
- - 9 A (1)
- - 9.8 A (2)
- - 9.9 A (1)
- Rds On - Drain-Source Resistance :
-
- - 70 mOhms (1)
- 0.021 Ohms (1)
- 1.6 Ohms (1)
- 10 mOhms (1)
- 105 mOhms (2)
- 120 mOhms (1)
- 130 mOhms (2)
- 15 Ohms (2)
- 155 mOhms (1)
- 17 mOhms (1)
- 240 mOhms (1)
- 25 mOhms (3)
- 255 mOhms (1)
- 257 mOhms (1)
- 300 mOhms (3)
- 35 mOhms (1)
- 36 mOhms (1)
- 41 mOhms (2)
- 64 mOhms (1)
- 70 mOhms (2)
- 72 mOhms (1)
- 8.5 mOhms (1)
- 9 mOhms (2)
- 9.4 mOhms (1)
- 98 mOhms (1)
35 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
306,500
In-stock
|
Nexperia | MOSFET PMV50EPEA/TO-236AB/REEL 7 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.2 A | 35 mOhms | - 3 V | 19.2 nC | Enhancement | |||
|
|
2,700
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.5 A | 257 mOhms | - 3 V | 4.1 nC | Enhancement | ||||
|
|
2,248
In-stock
|
IR / Infineon | MOSFET 1 P-CH -40V HEXFET 15mOhms 73nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 25 mOhms | - 3 V | 73 nC | Enhancement | ||||
|
|
6,934
In-stock
|
Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
|
|
GET PRICE |
11,566
In-stock
|
onsemi | MOSFET PFET TSOP6 60V 2.5A 111MO | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 72 mOhms | - 3 V | 18.1 nC | Enhancement | |||
|
|
6,383
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 40V P-CHANNEL | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 41 mOhms | - 3 V | 14 nC | Enhancement | ||||
|
|
2,943
In-stock
|
Infineon Technologies | MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | - 3 V | 27 nC | |||||
|
|
4,369
In-stock
|
Diodes Incorporated | MOSFET 100V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9 A | 240 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
|
|
2,434
In-stock
|
Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 6.6 A | 25 mOhms | - 3 V | 53.1 nC | Enhancement | ||||
|
|
6,730
In-stock
|
Diodes Incorporated | MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs | +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.3 A | 105 mOhms | - 3 V | 17.2 nC | Enhancement | ||||
|
|
3,574
In-stock
|
Diodes Incorporated | MOSFET P-Ch 40V Enh Mode 60Vds 20Vgs 2569pF | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.3 A | 9.4 mOhms | - 3 V | 68.6 nC | Enhancement | ||||
|
|
4,294
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh FET 25Mgs 2207pF 21.6nC | 25 V | SMD/SMT | U-DFN2523-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 10.4 A | 15 Ohms | - 3 V | 42.7 nC | Enhancement | ||||
|
|
2,147
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 15.2 A | 10 mOhms | - 3 V | 41 nC | Enhancement | ||||
|
|
1,992
In-stock
|
Diodes Incorporated | MOSFET 40V P-Ch Enh Mode 20Vgs 587pF 12.2nC | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 3.4 A | 64 mOhms | - 3 V | 12.2 nC | Enhancement | ||||
|
|
754
In-stock
|
Fairchild Semiconductor | MOSFET PT5 150V/20V Pch PowerTrench Mosfet | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 150 V | - 2.2 A | 255 mOhms | - 3 V | 16 nC | Enhancement | PowerTrench | |||
|
|
1,391
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgss 1.8W | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.8 A | 36 mOhms | - 3 V | 24 nC | Enhancement | ||||
|
|
2,707
In-stock
|
onsemi | MOSFET PFET 30V 1.95A 20MO | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 1.95 A | 155 mOhms | - 3 V | 10 nC | Enhancement | ||||
|
|
9,186
In-stock
|
onsemi | MOSFET PFET SOT23 60V 211MA 5OHM | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 196 mA | 1.6 Ohms | - 3 V | 1 nC | Enhancement | ||||
|
|
1,048
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 41V 60V P-Ch 6.1A 250Vgs | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 300 mOhms | - 3 V | 9.7 nC | Enhancement | ||||
|
|
2,384
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 60Vds 20Vgs | +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.3 A | 105 mOhms | - 3 V | 17.2 nC | Enhancement | ||||
|
|
1,636
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh FET 20Vgs -14A 1.6W | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3.6 A | 120 mOhms | - 3 V | 14 nC | Enhancement | ||||
|
|
1,749
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 1V-40V SO-8 T&R 2.5K | +/- 25 V | SMD/SMT | SO-8 | - 50 C | + 155 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.9 A | 17 mOhms | - 3 V | 41 nC | Enhancement | ||||
|
|
2,153
In-stock
|
Diodes Incorporated | MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF | +/- 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.7 A | 25 mOhms | - 3 V | 53.1 nC | Enhancement | ||||
|
|
1,343
In-stock
|
Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 2.3 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
|
|
1,355
In-stock
|
Diodes Incorporated | MOSFET FET BVDSS 25V 30V P-Ch 0.94W 2246pF | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 8.5 mOhms | - 3 V | 41 nC | Enhancement | ||||
|
|
3,840
In-stock
|
Diodes Incorporated | MOSFET P-Ch ENH FET -30V 70mOhm -10V -3.8A | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A, - 5.6 A | 70 mOhms | - 3 V | 11 nC | Enhancement | ||||
|
|
2,083
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 23.6 A | - 70 mOhms | - 3 V | 25 nC | Enhancement | ||||
|
|
9,000
In-stock
|
Diodes Incorporated | MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 130 mOhms | - 3 V | 17.7 nC | Enhancement | ||||
|
|
6,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 41 nC | Enhancement | ||||
|
|
6,000
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET 30Vdss 25Vgss | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 9.8 A | 9 mOhms | - 3 V | 41 nC | Enhancement |
