2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,730
In-stock
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Diodes Incorporated | MOSFET 60V Dual P-Ch Enh FET 60Vds 20Vgs | +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.3 A | 105 mOhms | - 3 V | 17.2 nC | Enhancement | |||
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2,384
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch Enh FET 60Vds 20Vgs | +/- 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 7.3 A | 105 mOhms | - 3 V | 17.2 nC | Enhancement |
