- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2,877
In-stock
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Fairchild Semiconductor | MOSFET Single P-Channel Power Trench Mosfet | 8 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 12 A | 13 mOhms | - 0.6 V | PowerTrench | |||||
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5,392
In-stock
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Nexperia | MOSFET Broad small-signal MOSFET Portfolio | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 80 mOhms | - 0.6 V | 5.7 nC | Enhancement | |||||
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1,825
In-stock
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Nexperia | MOSFET PMN50UPE/SC-74/REEL 7" Q1/T1 * | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 50 mOhms | - 0.6 V | 10.5 nC | Enhancement | |||||
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490
In-stock
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Nexperia | MOSFET 20V, SOT1118 MOSFET-SCHOTTKY | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 80 mOhms | - 0.6 V | 5.7 nC | Enhancement | |||||
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1,314
In-stock
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Texas instruments | MOSFET 12V PCH NexFET | - 6 V | SMD/SMT | DSBGA-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.2 A | 123 mOhms | - 0.6 V | 2.9 nC | NexFET | ||||
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1,774
In-stock
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Fairchild Semiconductor | MOSFET 12V/8V, 40/50/80 MO, P-CH, SINGLE, SSOT3 | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.6 A | 80 mOhms | - 0.6 V | 12 nC |
