- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,392
In-stock
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Nexperia | MOSFET Broad small-signal MOSFET Portfolio | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 80 mOhms | - 0.6 V | 5.7 nC | Enhancement | ||||
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490
In-stock
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Nexperia | MOSFET 20V, SOT1118 MOSFET-SCHOTTKY | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.7 A | 80 mOhms | - 0.6 V | 5.7 nC | Enhancement | ||||
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1,774
In-stock
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Fairchild Semiconductor | MOSFET 12V/8V, 40/50/80 MO, P-CH, SINGLE, SSOT3 | 8 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2.6 A | 80 mOhms | - 0.6 V | 12 nC |
