- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,183
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | ||||||
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1,473
In-stock
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onsemi | MOSFET NFET IPAK 600V 2.2A 4.8R | 30 V | Through Hole | TO-247-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.4 A | 4 Ohms | 4.5 V | 10.1 nC | |||||
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385
In-stock
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onsemi | MOSFET 600V 0.95 OHM TO- 220FP | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 950 mOhms | 4.5 V | 39 nC | |||||
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56
In-stock
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IXYS | MOSFET 30 Amps 600V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | |||||
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34
In-stock
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IXYS | MOSFET 600V 44A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 44 A | 130 mOhms | 4.5 V | 330 nC | Enhancement | HyperFET | |||
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370
In-stock
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onsemi | MOSFET NFET T0220FP 600V 4A 1.8R | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 1.8 Ohms | 4.5 V | 19 nC | ||||||
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423
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 7.3A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 600 mOhms | 4.5 V | 27 nC | CoolMOS | ||||
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4
In-stock
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IXYS | MOSFET 600V 60A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 75 mOhms | 4.5 V | 380 nC | Enhancement | HyperFET | |||
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GET PRICE |
9,990
In-stock
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onsemi | MOSFET NFET DPAK 2.6A 3.6R | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 3.3 Ohms | 4.5 V | 12 nC | ||||
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4,740
In-stock
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onsemi | MOSFET NFET DPAK 600V 4A 1.8R | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 4.1 A | 1.8 Ohms | 4.5 V | 19 nC | ||||||||
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529
In-stock
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IXYS | MOSFET 30 Amps 600V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | Linear L2 | |||
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1,725
In-stock
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onsemi | MOSFET NFET IPAK 600V 4A 1.8R | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 4.1 A | 1.8 Ohms | 4.5 V | 19 nC | ||||||||
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86,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 4.5 V | 16 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 30 Amps 600V | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | Linear L2 | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 11A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | 4.5 V | 41.5 nC | CoolMOS | ||||
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95,000
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement |
