- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- 9 mOhms (2)
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- 950 mOhms (1)
- Qg - Gate Charge :
-
- 10.1 nC (1)
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- 7.4 nC (1)
- 7.8 nC (3)
- 72 nC (1)
- 95 nC (1)
- 96 nC (3)
89 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
11,946
In-stock
|
STMicroelectronics | MOSFET N-channel 80 V 3.5 mOhm typ 90 A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.3 mOhms | 4.5 V | 96 nC | ||||||
|
402
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | ||||
|
1,000
In-stock
|
IXYS | MOSFET SMD N-CHANNEL POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 200 mA | 450 Ohms | 4.5 V | 7.4 nC | Enhancement | |||||
|
VIEW | IXYS | MOSFET 360 Amps 100V | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 29 A | 2.6 mOhms | 4.5 V | 145 nC | Enhancement | |||||
|
95
In-stock
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 4.5 V | 540 nC | Enhancement | Linear L2 | ||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 3.9 mOhms | 4.5 V | 117 nC | Enhancement | |||||
|
2,261
In-stock
|
STMicroelectronics | MOSFET Nchanl 100V 0027 Ohm typ 25 A Pwr MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 25 A | 35 mOhms | 4.5 V | 14 nC | ||||||
|
1,354
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 5.1 mOhm 45A STripFET VII | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 45 A | 7 mOhms | 4.5 V | 72 nC | ||||||
|
2,217
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.02 Ohm typ. 35A STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | ||||||
|
925
In-stock
|
STMicroelectronics | MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.15 mOhms | 4.5 V | 404 nC | Enhancement | |||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-chanl 80 V 33 mOhm typ 90 A Pwr MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4 mOhms | 4.5 V | 96 nC | Enhancement | |||||
|
915
In-stock
|
STMicroelectronics | MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.15 mOhms | 4.5 V | 404 nC | Enhancement | |||||
|
1,209
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 1300 mOhm Zener | 20 V, 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.3 Ohms | 4.5 V | 16.2 nC | SuperFET II | |||||
|
1,266
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 4.5 V | 22 nC | SuperFET II | |||||
|
913
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 650mOhm Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 650 mOhms | 4.5 V | 27 nC | SuperFET II | |||||
|
GET PRICE |
6,230
In-stock
|
onsemi | MOSFET SuperFET2, 400mohm, 800V, Zener | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 400 mOhms | 4.5 V | 56 nC | SuperFET II | |||||
|
559
In-stock
|
Fairchild Semiconductor | MOSFET Smart Power Module | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 120 A | 5.3 mOhms | 4.5 V | 65.4 nC | Enhancement | |||||
|
588
In-stock
|
Fairchild Semiconductor | MOSFET 80V 3.2mohm TO220 3L JEDEC GREEN EMC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 211 A | 2.85 mOhms | 4.5 V | 111 nC | Enhancement | |||||
|
172,000
In-stock
|
STMicroelectronics | MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 4.5 V | 19 nC | Enhancement | |||||
|
799
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 1300mOhm Y-formed lead | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.3 Ohms | 4.5 V | 16.2 nC | ||||||
|
679
In-stock
|
IXYS | MOSFET Trench T2 HiperFET Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 110 A | 11 mOhms | 4.5 V | 150 nC | Enhancement | HiPerFET | ||||
|
2,500
In-stock
|
STMicroelectronics | MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3 | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 400 V | 1.8 A | 3.4 Ohms | 4.5 V | 11 nC | ||||||||
|
1,152
In-stock
|
STMicroelectronics | MOSFET Nchanl 100V 0013 Ohm typ 45 A Pwr MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 45 A | 18 mOhms | 4.5 V | 25 nC | ||||||
|
992
In-stock
|
STMicroelectronics | MOSFET N-CH 60V 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 6.5 mOhms | 4.5 V | 122 nC | ||||||
|
1,787
In-stock
|
STMicroelectronics | MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3 | 3 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 1.95 Ohms | 4.5 V | 14 nC | |||||||
|
3,183
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | |||||||
|
1,898
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | Enhancement | |||||
|
213
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 229 A | 2.4 mOhms | 4.5 V | 137 nC | Enhancement | PowerTrench | ||||
|
1,594
In-stock
|
STMicroelectronics | MOSFET N-Ch 450V 3.2 ohm 1.8 A SuperMESH3 | 3 V | SMD/SMT | SOT-223-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 450 V | 600 mA | 3.8 Ohms | 4.5 V | 6 nC | |||||||
|
18
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 |