- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,217
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.02 Ohm typ. 35A STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | ||||
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172,000
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 4.5 V | 19 nC | Enhancement | |||
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1,898
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 32 A | 24 mOhms | 4.5 V | 19 nC | Enhancement | |||
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370
In-stock
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onsemi | MOSFET NFET T0220FP 600V 4A 1.8R | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 1.8 Ohms | 4.5 V | 19 nC | |||||
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4,740
In-stock
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onsemi | MOSFET NFET DPAK 600V 4A 1.8R | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 4.1 A | 1.8 Ohms | 4.5 V | 19 nC | |||||||
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1,725
In-stock
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onsemi | MOSFET NFET IPAK 600V 4A 1.8R | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 4.1 A | 1.8 Ohms | 4.5 V | 19 nC | |||||||
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924
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.02 Ohm typ 35A STripFET VII | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 24 A | 24 mOhms | 4.5 V | 19 nC |
