- Vgs - Gate-Source Voltage :
- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 1.15 Ohms (1)
- 1.3 Ohms (3)
- 1.8 Ohms (1)
- 1.95 Ohms (2)
- 10.5 Ohms (1)
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- 15 Ohms (1)
- 17 Ohms (2)
- 170 mOhms (2)
- 18 mOhms (1)
- 20.5 Ohms (1)
- 200 mOhms (2)
- 220 mOhms (1)
- 24 mOhms (1)
- 240 mOhms (3)
- 3.5 Ohms (1)
- 3.8 Ohms (1)
- 320 mOhms (2)
- 33 mOhms (2)
- 36 mOhms (1)
- 380 mOhms (1)
- 4.5 Ohms (2)
- 400 mOhms (1)
- 45 mOhms (2)
- 450 Ohms (1)
- 540 mOhms (1)
- 600 mOhms (1)
- 650 mOhms (1)
- 75 mOhms (1)
- 750 mOhms (1)
- 850 mOhms (1)
- 950 mOhms (1)
- Qg - Gate Charge :
-
- 14 nC (3)
- 16 nC (1)
- 16.2 nC (3)
- 170 nC (2)
- 19 nC (2)
- 22 nC (1)
- 22.5 nC (1)
- 24.8 nC (1)
- 240 nC (2)
- 255 nC (2)
- 258 nC (1)
- 27 nC (2)
- 320 nC (2)
- 330 nC (1)
- 335 nC (3)
- 34 nC (1)
- 360 nC (1)
- 380 nC (1)
- 39 nC (2)
- 41.5 nC (1)
- 42 nC (1)
- 500 nC (1)
- 540 nC (1)
- 56 nC (1)
- 6 nC (1)
- 640 nC (2)
- 7.4 nC (1)
- 7.8 nC (3)
- 95 nC (1)
45 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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402
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
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1,000
In-stock
|
IXYS | MOSFET SMD N-CHANNEL POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 200 mA | 450 Ohms | 4.5 V | 7.4 nC | Enhancement | ||||
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95
In-stock
|
IXYS | MOSFET L2 Linear Power MOSFET | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 4.5 V | 540 nC | Enhancement | Linear L2 | |||
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1,209
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 1300 mOhm Zener | 20 V, 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.3 Ohms | 4.5 V | 16.2 nC | SuperFET II | ||||
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1,266
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 850 mOhm Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 4.5 V | 22 nC | SuperFET II | ||||
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913
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 650mOhm Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 650 mOhms | 4.5 V | 27 nC | SuperFET II | ||||
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GET PRICE |
6,230
In-stock
|
onsemi | MOSFET SuperFET2, 400mohm, 800V, Zener | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 400 mOhms | 4.5 V | 56 nC | SuperFET II | ||||
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172,000
In-stock
|
STMicroelectronics | MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 4.5 V | 19 nC | Enhancement | ||||
|
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799
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 1300mOhm Y-formed lead | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.3 Ohms | 4.5 V | 16.2 nC | |||||
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1,787
In-stock
|
STMicroelectronics | MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3 | 3 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 3.8 A | 1.95 Ohms | 4.5 V | 14 nC | ||||||
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1,594
In-stock
|
STMicroelectronics | MOSFET N-Ch 450V 3.2 ohm 1.8 A SuperMESH3 | 3 V | SMD/SMT | SOT-223-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 450 V | 600 mA | 3.8 Ohms | 4.5 V | 6 nC | ||||||
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18
In-stock
|
IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
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714
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2, 1300mohm, 800V, Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.3 Ohms | 4.5 V | 16.2 nC | SuperFET II | ||||
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385
In-stock
|
onsemi | MOSFET 600V 0.95 OHM TO- 220FP | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 950 mOhms | 4.5 V | 39 nC | |||||
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56
In-stock
|
IXYS | MOSFET 30 Amps 600V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 4.5 V | 335 nC | Enhancement | |||||
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238
In-stock
|
IXYS | MOSFET 0.75 Amps 1000V 15 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 4.5 V | 7.8 nC | Enhancement | ||||
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34
In-stock
|
IXYS | MOSFET 600V 44A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 44 A | 130 mOhms | 4.5 V | 330 nC | Enhancement | HyperFET | |||
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20
In-stock
|
IXYS | MOSFET 138 Amps 300V 0.018 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 300 V | 138 A | 18 mOhms | 4.5 V | 258 nC | Enhancement | Polar, HiPerFET | |||
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441
In-stock
|
IXYS | MOSFET 0.8 Amps 1200V 25 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 800 mA | 20.5 Ohms | 4.5 V | 14 nC | Enhancement | Polar | |||
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27
In-stock
|
IXYS | MOSFET 40 Amps 500V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | |||
|
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53
In-stock
|
IXYS | MOSFET 30.0 Amps 500V 0.002 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 | |||
|
|
154
In-stock
|
IXYS | MOSFET 0.75 Amps 1000V 15 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 4.5 V | 7.8 nC | Enhancement | ||||
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45
In-stock
|
IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 60A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 60 A | 45 mOhms | 4.5 V | 255 nC | Enhancement | Linear L2 | |||
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43
In-stock
|
IXYS | MOSFET 40 Amps 500V | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 170 mOhms | 4.5 V | 320 nC | Enhancement | Linear L2 | |||
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32
In-stock
|
IXYS | MOSFET LINEAR L2 SERIES MOSFET 200V 60A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 60 A | 45 mOhms | 4.5 V | 255 nC | Enhancement | Linear L2 | |||
|
|
370
In-stock
|
onsemi | MOSFET NFET T0220FP 600V 4A 1.8R | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 1.8 Ohms | 4.5 V | 19 nC | ||||||
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4
In-stock
|
IXYS | MOSFET 1.4 Amps 1200V 15 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 1.4 A | 10.5 Ohms | 4.5 V | 24.8 nC | Enhancement | Polar | |||
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|
36
In-stock
|
IXYS | MOSFET 3 Amps 1200V 4.500 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 3 A | 4.5 Ohms | 4.5 V | 39 nC | Enhancement | ||||
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|
17
In-stock
|
IXYS | MOSFET 21 Amps 500V | 20 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 21 A | 220 mOhms | 4.5 V | 95 nC | Enhancement | ISOPLUS i4-PAC | |||
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20
In-stock
|
IXYS | MOSFET LINEAR L2 SERIES MOSFET 500V 30A | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 30 A | 200 mOhms | 4.5 V | 240 nC | Enhancement | Linear L2 |
