- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | |||
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VIEW | IXYS | MOSFET 30 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 450 mOhms | 5 V | 545 nC | Enhancement |
