- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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135
In-stock
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IXYS | MOSFET 88 Amps 300V 0.04 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 88 A | 40 mOhms | 5 V | 180 nC | Enhancement | PolarHT | |||
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304
In-stock
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IXYS | MOSFET POLAR HT MOSFET 150V 120A | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 120 A | 16 mOhms | 5 V | 150 nC | Enhancement | PolarHT | |||
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226
In-stock
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IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||
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55
In-stock
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IXYS | MOSFET 36.0 Amps 500 V 0.17 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 36 A | 170 mOhms | 5 V | 85 nC | Enhancement | PolarHV | |||
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70
In-stock
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IXYS | MOSFET 6 Amps 1200V 2.700 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 6 A | 2.6 Ohms | 5 V | 56 nC | Enhancement | ||||
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81
In-stock
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IXYS | MOSFET 600V 50A 0.145Ohm PolarP3 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 50 A | 145 mOhms | 5 V | 94 nC | HyperFET | ||||||
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92
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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45
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | |||
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39
In-stock
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IXYS | MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 60 A | 100 mOhms | 5 V | 96 nC | HyperFET | ||||||
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30
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHV, HiPerFET | |||
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19
In-stock
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IXYS | MOSFET 140 Amps 100V 0.011 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 140 A | 11 mOhms | 5 V | 155 nC | Enhancement | PolarHT | |||
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8
In-stock
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IXYS | MOSFET 600V 36A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 190 mOhms | 5 V | 102 nC | Enhancement | PolarHV, HiPerFET | |||
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30
In-stock
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IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT | |||
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12
In-stock
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IXYS | MOSFET 20 Amps 800V 0.52 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 20 A | 520 mOhms | 5 V | 86 nC | Enhancement | PolarHV, HiPerFET | |||
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28
In-stock
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IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | 5 V | 107 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 69 Amps 300V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 69 A | 49 mOhms | 5 V | 156 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 64 Amps 250V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 49 mOhms | 5 V | 105 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 30.0 Amps 600 V 0.24 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | 5 V | 82 nC | Enhancement | PolarHV |
