- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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555
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 75 V | 480 A | 1.5 mOhms | 5 V | 545 nC | Enhancement | HiPerFET | ||||
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472
In-stock
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IXYS | MOSFET 155A 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 155 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | ||||
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95
In-stock
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IXYS | MOSFET Polar Power MOSFET HiPerFET | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 295 A | 5.5 mOhms | 5 V | 279 nC | Enhancement | Polar, HiPerFET | ||||
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98
In-stock
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IXYS | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 170 V | 260 A | 5.2 mOhms | 5 V | 640 nC | Enhancement | HiPerFET | ||||
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46
In-stock
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IXYS | MOSFET DIODE Id82 BVdass600 | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 72 A | 75 mOhms | 5 V | 240 nC | Enhancement | Polar, HiPerFET | ||||
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36
In-stock
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IXYS | MOSFET 8 Amps 1500V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 7.5 A | 3.6 Ohms | 5 V | 250 nC | Enhancement | |||||
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37
In-stock
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IXYS | MOSFET 22 Amps 1000V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | 5 V | 270 nC | Enhancement | |||||
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42
In-stock
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IXYS | MOSFET 140 Amps 200V 0.018 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 115 A | 18 mOhms | 5 V | 240 nC | Enhancement | PolarHT, HiPerFET | ||||
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22
In-stock
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IXYS | MOSFET 600V 90A 0.056Ohm PolarP3 Power MOSFET | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 600 V | 90 A | 56 mOhms | 5 V | 245 nC | HyperFET | |||||||
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32
In-stock
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IXYS | MOSFET 500V 112A 0.039Ohm PolarP3 Power MOSFET | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 500 V | 112 A | 39 mOhms | 5 V | 250 nC | HyperFET | |||||||
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15
In-stock
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IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 300V 130A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 130 A | 19 mOhms | 5 V | 335 nC | Enhancement | GigaMOS | ||||
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20
In-stock
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IXYS | MOSFET 102 Amps 300V 0.033 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 86 A | 33 mOhms | 5 V | 224 nC | Enhancement | PolarHV, HiPerFET | ||||
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4
In-stock
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IXYS | MOSFET 36 Amps 800V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 39 A | 190 mOhms | 5 V | 200 nC | Enhancement | PolarHV, HiPerFET | ||||
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1,262
In-stock
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IXYS | MOSFET 230A 200V | 20 V | Screw Mount | SOT-227-4 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 230 A | 7.5 mOhms | 5 V | 378 nC | Enhancement | GigaMOS |