- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,610
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 2.4 mOhms | 120 nC | |||||||||
|
105,900
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
4,713
In-stock
|
IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 116 A | 3.5 mOhms | 3.7 V | 120 nC | StrongIRFET | |||||
|
1,196
In-stock
|
onsemi | MOSFET NFET SO8FL 60V 287A 1.2MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 930 uOhms | 1.2 V | 120 nC | Enhancement | |||||
|
519
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
927
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 4 V | 120 nC | ||||||
|
450
In-stock
|
Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 3mOhms 120nC | 20 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
386
In-stock
|
Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
1,500
In-stock
|
onsemi | MOSFET T6 60V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 0.93 mOhms | 1.2 V | 120 nC | Enhancement | |||||
|
1,500
In-stock
|
onsemi | MOSFET T6 60V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 0.93 mOhms | 1.2 V | 120 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
645
In-stock
|
IR / Infineon | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC |