- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,610
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 60 V | 200 A | 2.4 mOhms | 120 nC | |||||||
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956
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | ||||
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54,900
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 127A 6mOhm 120nC Qg | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 134 A | 4.8 mOhms | 120 nC | |||||||
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692
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | ||||
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70
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 14 A | 980 mOhms | 4 V | 120 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 0.037 Ohms | 3 V | 120 nC | Enhancement |
