- Vgs - Gate-Source Voltage :
- Mounting Style :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
-
- 0.0035 Ohms (1)
- 0.016 Ohms (1)
- 0.93 mOhms (2)
- 1 MOhms (1)
- 1.7 mOhms (1)
- 10.3 mOhms (1)
- 11 mOhms (3)
- 12.1 mOhms (1)
- 2 mOhms (2)
- 2.2 mOhms (1)
- 2.4 mOhms (3)
- 20 mOhms (2)
- 3.3 mOhms (3)
- 3.5 mOhms (1)
- 3.7 mOhms (1)
- 3.9 mOhms (1)
- 4.8 mOhms (1)
- 4.9 mOhms (1)
- 5 mOhms (1)
- 5.3 mOhms (2)
- 8 mOhms (1)
- 9 mOhms (1)
- 930 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
33 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
16,000
In-stock
|
IR / Infineon | MOSFET MOSFT 150V 99A 12.1mOhm 77nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 99 A | 12.1 mOhms | 5 V | 120 nC | ||||||||
|
3,298
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 10mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 88 A | 8 mOhms | 4 V | 120 nC | Enhancement | |||||
|
4,713
In-stock
|
IR / Infineon | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 116 A | 3.5 mOhms | 3.7 V | 120 nC | StrongIRFET | |||||
|
956
In-stock
|
IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | ||||||
|
1,196
In-stock
|
onsemi | MOSFET NFET SO8FL 60V 287A 1.2MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 930 uOhms | 1.2 V | 120 nC | Enhancement | |||||
|
1,631
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 380A 1.4mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 380 A | 1 MOhms | 120 nC | Enhancement | ||||||
|
1,022
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC | Enhancement | ||||||
|
800
In-stock
|
onsemi | MOSFET NFET D2PAK 100V 76A 13MOH | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 76 A | 11 mOhms | 2 V to 4 V | 120 nC | ||||||
|
692
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 160A 5.3mOhm 120nCAC | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 160 A | 5.3 mOhms | 4 V | 120 nC | ||||||
|
927
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 210A 3mOhm 120nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 4 V | 120 nC | ||||||
|
885
In-stock
|
Vishay Semiconductors | MOSFET 40V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 32 A | 0.0035 Ohms | 1.5 V | 120 nC | Enhancement | TrenchFET | ||||
|
440
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 100+ | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 99 A | 10.3 mOhms | 3 V | 120 nC | Enhancement | |||||
|
588
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 97A 9mOhm 83nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 97 A | 9 mOhms | 4 V | 120 nC | ||||||||
|
522
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 84A 11mOhm 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 85 A | 11 mOhms | 4 V | 120 nC | ||||||
|
215
In-stock
|
Infineon Technologies | MOSFET Auto Q101 -55V P-Ch HEXFET Power MOSFET | 20 V | Through Hole | TO-262-3 | + 175 C | Tube | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | 120 nC | ||||||||
|
370,000
In-stock
|
Infineon Technologies | MOSFET 100V 127A 6mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 120 nC | |||||||||
|
304
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.9 mOhms | 2.5 V to 4.5 V | 120 nC | Enhancement | ||||||
|
285
In-stock
|
onsemi | MOSFET NFET TO220 100V 76A 13MOH | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 76 A | 11 mOhms | 2 V to 4 V | 120 nC | ||||||
|
290
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 130A 6.3mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 5 mOhms | 4 V | 120 nC | ||||||
|
250
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 120 A | 3.7 mOhms | 2.5 V to 4.5 V | 120 nC | Enhancement | |||||
|
138
In-stock
|
Texas instruments | MOSFET 80V N-CH Power MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 80 V | 200 A | 2.2 mOhms | 2.5 V | 120 nC | NexFET | |||||
|
100
In-stock
|
Texas instruments | MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 200 A | 2 mOhms | 2.5 V | 120 nC | Enhancement | NexFET | ||||
|
279
In-stock
|
Texas instruments | MOSFET 80 V, N-Channel NexFET Power MOSFET 3-DDPAK/TO... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 150 A | 2 mOhms | 2.5 V | 120 nC | Enhancement | NexFET | ||||
|
1,500
In-stock
|
onsemi | MOSFET T6 60V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 0.93 mOhms | 1.2 V | 120 nC | Enhancement | |||||
|
1,500
In-stock
|
onsemi | MOSFET T6 60V HEFET | +/- 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 287 A | 0.93 mOhms | 1.2 V | 120 nC | Enhancement | |||||
|
VIEW | Infineon Technologies | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
800
In-stock
|
Infineon Technologies | MOSFET 75V 170A 4.1 mOhm Automotive MOSFET | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 3.3 mOhms | 120 nC | |||||||||
|
645
In-stock
|
IR / Infineon | MOSFET 60V 210A 3 mOhm Automotive MOSFET | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 210 A | 2.4 mOhms | 120 nC | |||||||||
|
VIEW | Infineon Technologies | MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-263-7 | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 380 A | 1.7 mOhms | 120 nC | ||||||||
|
VIEW | Vishay Semiconductors | MOSFET 150V 85A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 85 A | 0.016 Ohms | 2.5 V | 120 nC | Enhancement | TrenchFET |