- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Packaging :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
46,500
In-stock
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Infineon Technologies | MOSFET P-CH 60V 16.4A TO252-3 | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 63 W | P-Channel | 60 V | 16.4 A | 90 mOhms | 4 V | 27 nC | TO-252-3 | 2500 | Green available | ||||||||
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2,500
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 8 A | 21 mOhms | 1 V | 27 nC | Enhancement | ||||||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 60V LL U8FL WF | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement | |||||||
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1,500
In-stock
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onsemi | MOSFET AFSM T6 60V LL U8FL | +/- 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 109 A | 4.2 mOhms | 1.2 V | 27 nC | Enhancement |
