- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
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- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
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- 0.0176 Ohms (2)
- 0.029 Ohms (1)
- 10 Ohms (2)
- 10.5 mOhms (6)
- 108 mOhms (1)
- 13.4 mOhms (1)
- 130 mOhms (2)
- 165 mOhms (2)
- 190 mOhms (1)
- 2.2 mOhms (1)
- 2.7 mOhms (1)
- 21 mOhms (1)
- 24.5 mOhms (1)
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- 4.2 mOhms (2)
- 4.8 mOhms (1)
- 5.3 mOhms (1)
- 5.7 mOhms (1)
- 50 mOhms (1)
- 6 mOhms (2)
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- 600 mOhms (1)
- 650 mOhms (2)
- 8.5 mOhms (2)
- 8.7 mOhms (1)
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45 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Factory Pack Quantity | RoHS | |
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GET PRICE |
46,500
In-stock
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Infineon Technologies | MOSFET P-CH 60V 16.4A TO252-3 | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 63 W | P-Channel | 60 V | 16.4 A | 90 mOhms | 4 V | 27 nC | 2500 | Green available | |||||||||
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500
In-stock
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Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 108 mOhms | 3 V | 27 nC | Enhancement | |||||||
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1,535
In-stock
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Fairchild Semiconductor | MOSFET 800V 10A NChn MOSFET SuperFET II | 20 V, 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 650 mOhms | 2.5 V | 27 nC | Enhancement | SuperFET II | ||||||
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3,557
In-stock
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IR / Infineon | MOSFET MOSFT 80V 10A 13.4mOhm 27nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 10 A | 13.4 mOhms | 27 nC | |||||||||||
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5,332
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | |||||||
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1,355
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 320 mOhms | 27 nC | Enhancement | ||||||||
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8,251
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 6.7 mOhms | 1 V | 27 nC | Enhancement | OptiMOS | ||||||
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384
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 60 A | 50 mOhms | 4 V | 27 nC | Enhancement | |||||||
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1,797
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 27 nC | Enhancement | ||||||||
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2,584
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 89 A | 10.5 mOhms | 27 nC | Enhancement | ||||||||
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3,032
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 82A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 82 A | 9 mOhms | 2.2 V | 27 nC | Enhancement | |||||||
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2,943
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | - 3 V | 27 nC | ||||||||
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913
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 800V 650mOhm Zener | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 8 A | 650 mOhms | 4.5 V | 27 nC | SuperFET II | |||||||
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1,696
In-stock
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Vishay Semiconductors | MOSFET 100V 32A 27watt AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 0.0176 Ohms | 1.5 V | 27 nC | Enhancement | TrenchFET | ||||||
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1,957
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | |||||||
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1,659
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 90 A | 10.5 mOhms | 3 V | 27 nC | Enhancement | |||||||
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412
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 12 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 88 A | 2.7 mOhms | 1 V | 27 nC | Depletion | PowerTrench Power Clip | ||||||
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3,384
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 70mOhms 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | 27 nC | Enhancement | ||||||||
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609
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 13A TO220FP-3 CoolMOS CP | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 250 mOhms | 27 nC | Enhancement | CoolMOS | |||||||
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76,000
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 24.5 mOhms | 4 V | 27 nC | ||||||||||
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2,774
In-stock
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Vishay Semiconductors | MOSFET 20V 8A 5W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8 A | 0.029 Ohms | - 2.5 V | 27 nC | Enhancement | TrenchFET | ||||||
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484
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 10 Ohms | 27 nC | |||||||||
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78
In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 1.6A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 10 Ohms | 27 nC | |||||||||
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325
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 8Vgss -7.6A ID 0.7W | +/- 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.6 A | 27 mOhms | - 1 V | 27 nC | Enhancement | |||||||
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14,788
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 6 mOhms | 1.4 V | 27 nC | Enhancement | |||||||
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215
In-stock
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Texas instruments | MOSFET 100V 8.7mOhm N-CH Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 10.5 mOhms | 2.8 V | 27 nC | Enhancement | NexFET | ||||||
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500
In-stock
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Texas instruments | MOSFET 30V NCH NexFET | 20 V | SMD/SMT | VSONP-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 4.8 mOhms | 1.4 V | 27 nC | NexFET | |||||||
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400
In-stock
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Texas instruments | MOSFET 30V NCH NexFET MOSFET | 20 V | SMD/SMT | VSONP-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 30 V | 35 A | 5.3 mOhms | 1.4 V | 27 nC | NexFET | |||||||
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423
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 7.3A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 600 mOhms | 4.5 V | 27 nC | CoolMOS | |||||||
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2,500
In-stock
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STMicroelectronics | MOSFET | +/- 20 V | SMD/SMT | SOIC-8 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 8 A | 21 mOhms | 1 V | 27 nC | Enhancement |
