- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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500
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Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 108 mOhms | 3 V | 27 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-Ch FET 600V 12s IDSS 100 uA | SMD/SMT | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 20 A | 190 mOhms | 5 V | 27 nC |