MOSFET - Kaimeite

Applied Filters :

3 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode
	IRF3709SPBF	1+ $2.100 10+ $1.790 100+ $1.430 500+ $1.250		PDF RFQ	1,797 In-stock	IR / Infineon	MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	30 V	90 A	10.5 mOhms		27 nC	Enhancement
	IRF3709PBF	1+ $1.380 10+ $1.180 100+ $0.903 500+ $0.798		PDF RFQ	1,659 In-stock	IR / Infineon	MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC	20 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	30 V	90 A	10.5 mOhms	3 V	27 nC	Enhancement
	IRF3709STRLPBF	1+ $1.460 10+ $1.240 100+ $0.957 500+ $0.846 3200+ $0.590		PDF RFQ	3,200 In-stock	Infineon Technologies	MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC	20 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	30 V	90 A	10.5 mOhms		27 nC	Enhancement

IRF3709SPBF

IRF3709SPBF

IR / Infineon

MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC

Stock : 1,797

1+: $2.100

10+: $1.790

100+: $1.430

500+: $1.250

IRF3709PBF

IRF3709PBF

IR / Infineon

MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC

Stock : 1,659

1+: $1.380

10+: $1.180

100+: $0.903

500+: $0.798

IRF3709STRLPBF

IRF3709STRLPBF

Infineon Technologies

MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC

Stock : 3,200

1+: $1.460

10+: $1.240

100+: $0.957

500+: $0.846

3200+: $0.590

Page 1 / 1