- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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In-stock
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IXYS | MOSFET N-CH MOSFETS (D2) 1000V 800MA | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 10 Ohms | 27 nC | ||||
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VIEW | STMicroelectronics | MOSFET POWER MOSFET N-CH | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 360 mOhms | 3 V | 27 nC |
