- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,952
In-stock
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IR / Infineon | MOSFET MOSFT 30V 24A 2.8mOhm 44nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 24 A | 3.04 mOhms | 1.8 V | 44 nC | |||||
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995
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 200 A | 3.3 mOhm | 1.8 V | 44 nC | Enhancement | NexFET | |||
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53,670
In-stock
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Texas instruments | MOSFET 60-V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.3 mOhms | 1.8 V | 44 nC | NexFET | ||||
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699
In-stock
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Texas instruments | MOSFET 60-V N-Chanel NxFT Pwr MOSFETs | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.3 mOhms | 1.8 V | 44 nC | NexFET |
